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BSG0813NDIATMA1

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Part Number
BSG0813NDIATMA1
Manufacturer
Infineon Technologies
Description
MOSFET 2N-CH 25V 19A/33A 8TISON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
BSG0813NDIATMA1.pdf
Total:$1.01930
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Infineon Technologies BSG0813NDIATMA1 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 91750 pcs

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(In US Dollars)
1pcs
$1.01930

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Part Number
BSG0813NDIATMA1
Manufacturer
Infineon Technologies
Description
MOSFET 2N-CH 25V 19A/33A 8TISON
Part Status
Active
FET Type
2 N-Channel (Dual) Asymmetrical
FET Feature
Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25°C
19A, 33A
Rds On (Max) @ Id, Vgs
3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1100pF @ 12V
Power - Max
2.5W
Operating Temperature
-55°C ~ 155°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TISON-8

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