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SI7900AEDN-T1-GE3

SI7900AEDN-T1-GE3 Image is for reference, Plz contact us to get the real picture
Part Number
SI7900AEDN-T1-GE3
Manufacturer
Vishay
Description
MOSFET 2N-CH 20V 6A PPAK 1212-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SI7900AEDN-T1-GE3.pdf
Total:$0.55760
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Vishay SI7900AEDN-T1-GE3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 167720 pcs

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(In US Dollars)
1pcs
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Part Number
SI7900AEDN-T1-GE3
Manufacturer
Vishay
Description
MOSFET 2N-CH 20V 6A PPAK 1212-8
Part Status
Active
FET Type
2 N-Channel (Dual) Common Drain
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
6A
Rds On (Max) @ Id, Vgs
26 mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.5W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Supplier Device Package
PowerPAK® 1212-8 Dual

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