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IPD50N06S4L12ATMA1

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Part Number
IPD50N06S4L12ATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 60V 50A TO252-3-11
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPD50N06S4L12ATMA1.pdf
Total:$0.00000
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Infineon Technologies IPD50N06S4L12ATMA1 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 5556 pcs

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Part Number
IPD50N06S4L12ATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 60V 50A TO252-3-11
Part Status
Discontinued at Digi-Key
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
12 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs
40nC @ 10V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
2890pF @ 25V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-11
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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