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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single IPDD60R102G7XTMA1

IPDD60R102G7XTMA1

IPDD60R102G7XTMA1 Image is for reference, Plz contact us to get the real picture
Part Number
IPDD60R102G7XTMA1
Manufacturer
Infineon Technologies
Description
MOSFET NCH 650V 66A PG-HDSOP-10
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPDD60R102G7XTMA1.pdf
Total:$2.96188
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Infineon Technologies IPDD60R102G7XTMA1 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 31573 pcs

Refrence Price
(In US Dollars)		 1pcs
$2.96188

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Part Number
IPDD60R102G7XTMA1
Manufacturer
Infineon Technologies
Description
MOSFET NCH 650V 66A PG-HDSOP-10
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
102 mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id
4V @ 390µA
Gate Charge (Qg) (Max) @ Vgs
34nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1320pF @ 400V
FET Feature
-
Power Dissipation (Max)
139W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-HDSOP-10-1
Package / Case
10-PowerSOP Module

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