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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single IPB021N06N3GATMA1

IPB021N06N3GATMA1

IPB021N06N3GATMA1 Image is for reference, Plz contact us to get the real picture
Part Number
IPB021N06N3GATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 60V 120A TO263-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPB021N06N3GATMA1.pdf
Total:$0.00000
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Infineon Technologies IPB021N06N3GATMA1 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 5464 pcs

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Part Number
IPB021N06N3GATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 60V 120A TO263-3
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.1 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 196µA
Gate Charge (Qg) (Max) @ Vgs
275nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
23000pF @ 30V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D²PAK (TO-263AB)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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