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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single SISS98DN-T1-GE3

SISS98DN-T1-GE3

SISS98DN-T1-GE3 Image is for reference, Plz contact us to get the real picture
Part Number
SISS98DN-T1-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 200V 14.1A 1212-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SISS98DN-T1-GE3.pdf
Total:$0.50922
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Vishay SISS98DN-T1-GE3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 183655 pcs

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(In US Dollars)		 1pcs
$0.50922

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Part Number
SISS98DN-T1-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 200V 14.1A 1212-8
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
14.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
105 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14nC @ 7.5V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
608pF @ 100V
FET Feature
-
Power Dissipation (Max)
57W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8

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