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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single BSC123N10LSGATMA1

BSC123N10LSGATMA1

BSC123N10LSGATMA1 Image is for reference, Plz contact us to get the real picture
Part Number
BSC123N10LSGATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 100V 71A TDSON-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
BSC123N10LSGATMA1.pdf
Total:$0.80438
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Infineon Technologies BSC123N10LSGATMA1 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 116263 pcs

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(In US Dollars)		 1pcs
$0.80438

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Part Number
BSC123N10LSGATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 100V 71A TDSON-8
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
10.6A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
12.3 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.4V @ 72µA
Gate Charge (Qg) (Max) @ Vgs
68nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4900pF @ 50V
FET Feature
-
Power Dissipation (Max)
114W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8
Package / Case
8-PowerTDFN

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