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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single SI2301BDS-T1-GE3

SI2301BDS-T1-GE3

SI2301BDS-T1-GE3 Image is for reference, Plz contact us to get the real picture
Part Number
SI2301BDS-T1-GE3
Manufacturer
Vishay
Description
MOSFET P-CH 20V 2.2A SOT23-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SI2301BDS-T1-GE3.pdf
Total:$0.19855
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Vishay SI2301BDS-T1-GE3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 471021 pcs

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(In US Dollars)		 1pcs
$0.19855

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Part Number
SI2301BDS-T1-GE3
Manufacturer
Vishay
Description
MOSFET P-CH 20V 2.2A SOT23-3
Part Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
100 mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id
950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10nC @ 4.5V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
375pF @ 6V
FET Feature
-
Power Dissipation (Max)
700mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3

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