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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single SIR812DP-T1-GE3

SIR812DP-T1-GE3

SIR812DP-T1-GE3 Image is for reference, Plz contact us to get the real picture
Part Number
SIR812DP-T1-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 30V 60A PPAK SO-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SIR812DP-T1-GE3.pdf
Total:$0.77080
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Vishay SIR812DP-T1-GE3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 121329 pcs

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(In US Dollars)		 1pcs
$0.77080

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Part Number
SIR812DP-T1-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 30V 60A PPAK SO-8
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.45 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
335nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
10240pF @ 15V
FET Feature
-
Power Dissipation (Max)
6.25W (Ta), 104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8

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