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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single IPD60R380E6ATMA2

IPD60R380E6ATMA2

IPD60R380E6ATMA2 Image is for reference, Plz contact us to get the real picture
Part Number
IPD60R380E6ATMA2
Manufacturer
Infineon Technologies
Description
MOSFET NCH 600V 10.6A TO252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPD60R380E6ATMA2.pdf
Total:$0.00000
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Infineon Technologies IPD60R380E6ATMA2 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 6441 pcs

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Part Number
IPD60R380E6ATMA2
Manufacturer
Infineon Technologies
Description
MOSFET NCH 600V 10.6A TO252
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380 mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
3.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs
32nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
700pF @ 100V
FET Feature
Super Junction
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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