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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single SI5402DC-T1-GE3

SI5402DC-T1-GE3

SI5402DC-T1-GE3 Image is for reference, Plz contact us to get the real picture
Part Number
SI5402DC-T1-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 30V 4.9A 1206-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SI5402DC-T1-GE3.pdf
Total:$0.00000
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Vishay SI5402DC-T1-GE3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 3223 pcs

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Part Number
SI5402DC-T1-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 30V 4.9A 1206-8
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
35 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
1.3W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
1206-8 ChipFET™
Package / Case
8-SMD, Flat Lead

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