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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single IPB025N10N3GE8187ATMA1

IPB025N10N3GE8187ATMA1

IPB025N10N3GE8187ATMA1 Image is for reference, Plz contact us to get the real picture
Part Number
IPB025N10N3GE8187ATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 100V 180A TO263-7
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPB025N10N3GE8187ATMA1.pdf
Total:$3.26465
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Infineon Technologies IPB025N10N3GE8187ATMA1 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 28645 pcs

Refrence Price
(In US Dollars)		 1pcs
$3.26465

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Part Number
IPB025N10N3GE8187ATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 100V 180A TO263-7
Part Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
180A
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
2.5 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.5V @ 275µA
Gate Charge (Qg) (Max) @ Vgs
206nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
14800pF @ 50V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7
Package / Case
TO-263-7, D²Pak (6 Leads + Tab)

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