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SISS40DN-T1-GE3

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Part Number
SISS40DN-T1-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 100V 36.5A PPAK 1212
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SISS40DN-T1-GE3.pdf
Total:$0.59040
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Vishay SISS40DN-T1-GE3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 158402 pcs

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(In US Dollars)		 1pcs
$0.59040

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Part Number
SISS40DN-T1-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 100V 36.5A PPAK 1212
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
36.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
21 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
24nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
845pF @ 50V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8S (3.3x3.3)
Package / Case
8-PowerVDFN

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