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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single SI2337DS-T1-E3

SI2337DS-T1-E3

SI2337DS-T1-E3 Image is for reference, Plz contact us to get the real picture
Part Number
SI2337DS-T1-E3
Manufacturer
Vishay
Description
MOSFET P-CH 80V 2.2A SOT23-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SI2337DS-T1-E3.pdf
Total:$0.47560
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Vishay SI2337DS-T1-E3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 196638 pcs

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(In US Dollars)		 1pcs
$0.47560

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Part Number
SI2337DS-T1-E3
Manufacturer
Vishay
Description
MOSFET P-CH 80V 2.2A SOT23-3
Part Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80V
Current - Continuous Drain (Id) @ 25°C
2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
270 mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
500pF @ 40V
FET Feature
-
Power Dissipation (Max)
760mW (Ta), 2.5W (Tc)
Operating Temperature
-50°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3

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