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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single IPT60R080G7XTMA1

IPT60R080G7XTMA1

IPT60R080G7XTMA1 Image is for reference, Plz contact us to get the real picture
Part Number
IPT60R080G7XTMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 650V 29A HSOF-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPT60R080G7XTMA1.pdf
Total:$3.72072
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Infineon Technologies IPT60R080G7XTMA1 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 25134 pcs

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(In US Dollars)		 1pcs
$3.72072

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Part Number
IPT60R080G7XTMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 650V 29A HSOF-8
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25°C
29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
80 mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id
4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs
42nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1640pF @ 400V
FET Feature
-
Power Dissipation (Max)
167W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-HSOF-8-2
Package / Case
8-PowerSFN

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