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IPN60R2K1CEATMA1

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Part Number
IPN60R2K1CEATMA1
Manufacturer
Infineon Technologies
Description
MOSFET NCH 600V 3.7A SOT223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPN60R2K1CEATMA1.pdf
Total:$0.20731
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Infineon Technologies IPN60R2K1CEATMA1 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 451118 pcs

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(In US Dollars)
1pcs
$0.20731

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Part Number
IPN60R2K1CEATMA1
Manufacturer
Infineon Technologies
Description
MOSFET NCH 600V 3.7A SOT223
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.1 Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs
6.7nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
140pF @ 100V
FET Feature
Super Junction
Power Dissipation (Max)
5W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223
Package / Case
SOT-223-3

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