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SISS65DN-T1-GE3

SISS65DN-T1-GE3 Image is for reference, Plz contact us to get the real picture
Part Number
SISS65DN-T1-GE3
Manufacturer
Vishay
Description
MOSFET P-CHAN 30V PPAK 1212-8S
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SISS65DN-T1-GE3.pdf
Total:$0.38900
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Vishay SISS65DN-T1-GE3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 240414 pcs

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(In US Dollars)
1pcs
$0.38900

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Part Number
SISS65DN-T1-GE3
Manufacturer
Vishay
Description
MOSFET P-CHAN 30V PPAK 1212-8S
Part Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
25.9A (Ta), 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
138nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4930pF @ 15V
FET Feature
-
Power Dissipation (Max)
5.1W (Ta), 65.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S

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