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SIHP6N65E-GE3

SIHP6N65E-GE3 Image is for reference, Plz contact us to get the real picture
Part Number
SIHP6N65E-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 650V 7A TO220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SIHP6N65E-GE3.pdf
Total:$1.18650
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Vishay SIHP6N65E-GE3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 78819 pcs

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(In US Dollars)
1pcs
$1.18650

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Part Number
SIHP6N65E-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 650V 7A TO220AB
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
48nC @ 10V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
820pF @ 100V
FET Feature
-
Power Dissipation (Max)
78W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

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