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SIR618DP-T1-GE3

SIR618DP-T1-GE3 Image is for reference, Plz contact us to get the real picture
Part Number
SIR618DP-T1-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 200V 14.2A SO-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SIR618DP-T1-GE3.pdf
Total:$0.54694
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Vishay SIR618DP-T1-GE3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 170989 pcs

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1pcs
$0.54694

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Part Number
SIR618DP-T1-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 200V 14.2A SO-8
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
14.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
95 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16nC @ 7.5V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
740pF @ 100V
FET Feature
-
Power Dissipation (Max)
48W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8

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