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W987D2HBJX6E TR

W987D2HBJX6E TR Image is for reference, Plz contact us to get the real picture
Part Number
W987D2HBJX6E TR
Manufacturer
Winbond Electronics
Description
IC DRAM 128M PARALLEL 90VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
W987D2HBJX6E TR.pdf
Total:$2.18391
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Winbond Electronics W987D2HBJX6E TR is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 47612 pcs

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(In US Dollars)
1pcs
$2.18391

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Part Number
W987D2HBJX6E TR
Manufacturer
Winbond Electronics
Description
IC DRAM 128M PARALLEL 90VFBGA
Part Status
Not For New Designs
Memory Type
Volatile
Memory Format
DRAM
Technology
SDRAM - Mobile LPSDR
Memory Size
128Mb (4M x 32)
Clock Frequency
166MHz
Write Cycle Time - Word, Page
15ns
Access Time
5.4ns
Memory Interface
Parallel
Voltage - Supply
1.7V ~ 1.95V
Operating Temperature
-25°C ~ 85°C (TC)
Mounting Type
Surface Mount
Package / Case
90-TFBGA
Supplier Device Package
90-VFBGA (8x13)

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