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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single TJ8S06M3L(T6L1,NQ)

TJ8S06M3L(T6L1,NQ)

TJ8S06M3L(T6L1,NQ) Image is for reference, Plz contact us to get the real picture
Part Number
TJ8S06M3L(T6L1,NQ)
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET P-CH 60V 8A DPAK-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Total:$0.46200
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Toshiba Semiconductor and Storage TJ8S06M3L(T6L1,NQ) is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 202426 pcs

Refrence Price
(In US Dollars)		 1pcs
$0.46200

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Part Number
TJ8S06M3L(T6L1,NQ)
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET P-CH 60V 8A DPAK-3
Part Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
104 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
19nC @ 10V
Vgs (Max)
+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds
890pF @ 10V
FET Feature
-
Power Dissipation (Max)
27W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK+
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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