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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single SI2319DDS-T1-GE3

SI2319DDS-T1-GE3

SI2319DDS-T1-GE3 Image is for reference, Plz contact us to get the real picture
Part Number
SI2319DDS-T1-GE3
Manufacturer
Vishay
Description
MOSFET P-CHAN 40V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SI2319DDS-T1-GE3.pdf
Total:$0.19494
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Vishay SI2319DDS-T1-GE3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 479744 pcs

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(In US Dollars)		 1pcs
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Part Number
SI2319DDS-T1-GE3
Manufacturer
Vishay
Description
MOSFET P-CHAN 40V
Part Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40V
Current - Continuous Drain (Id) @ 25°C
2.7A (Ta), 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
75 mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
650pF @ 20V
FET Feature
-
Power Dissipation (Max)
1W (Ta), 1.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3

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