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1N4006GHB0G

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Part Number
1N4006GHB0G
Manufacturer
Taiwan Semiconductor
Description
DIODE GEN PURP 800V 1A DO204AL
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
1N4006GHB0G.pdf
Total:$0.02890
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Taiwan Semiconductor 1N4006GHB0G is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 3236035 pcs

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1pcs
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Part Number
1N4006GHB0G
Manufacturer
Taiwan Semiconductor
Description
DIODE GEN PURP 800V 1A DO204AL
Part Status
Active
Diode Type
Standard
Voltage - DC Reverse (Vr) (Max)
800V
Current - Average Rectified (Io)
1A
Voltage - Forward (Vf) (Max) @ If
1V @ 1A
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
-
Current - Reverse Leakage @ Vr
5µA @ 800V
Capacitance @ Vr, F
10pF @ 4V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Supplier Device Package
DO-204AL (DO-41)
Operating Temperature - Junction
-55°C ~ 150°C

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