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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single SIRA10BDP-T1-GE3

SIRA10BDP-T1-GE3

SIRA10BDP-T1-GE3 Image is for reference, Plz contact us to get the real picture
Part Number
SIRA10BDP-T1-GE3
Manufacturer
Vishay
Description
MOSFET N-CHAN 30V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SIRA10BDP-T1-GE3.pdf
Total:$0.34021
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Vishay SIRA10BDP-T1-GE3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 274892 pcs

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(In US Dollars)		 1pcs
$0.34021

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Part Number
SIRA10BDP-T1-GE3
Manufacturer
Vishay
Description
MOSFET N-CHAN 30V
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
30A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.6 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
36.2nC @ 10V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
1710pF @ 15V
FET Feature
-
Power Dissipation (Max)
5W (Ta), 43W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8

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