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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single IPB180N03S4L01ATMA1

IPB180N03S4L01ATMA1

IPB180N03S4L01ATMA1 Image is for reference, Plz contact us to get the real picture
Part Number
IPB180N03S4L01ATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 30V 180A TO263-7-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPB180N03S4L01ATMA1.pdf
Total:$1.37090
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Infineon Technologies IPB180N03S4L01ATMA1 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 68218 pcs

Refrence Price
(In US Dollars)		 1pcs
$1.37090

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Part Number
IPB180N03S4L01ATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 30V 180A TO263-7-3
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.05 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.2V @ 140µA
Gate Charge (Qg) (Max) @ Vgs
239nC @ 10V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
17600pF @ 25V
FET Feature
-
Power Dissipation (Max)
188W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7-3
Package / Case
TO-263-7, D²Pak (6 Leads + Tab)

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