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SI4200DY-T1-GE3

SI4200DY-T1-GE3 Image is for reference, Plz contact us to get the real picture
Part Number
SI4200DY-T1-GE3
Manufacturer
Vishay
Description
MOSFET 2N-CH 25V 8A 8SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SI4200DY-T1-GE3.pdf
Total:$0.25425
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Vishay SI4200DY-T1-GE3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 367832 pcs

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(In US Dollars)		 1pcs
$0.25425

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Part Number
SI4200DY-T1-GE3
Manufacturer
Vishay
Description
MOSFET 2N-CH 25V 8A 8SOIC
Part Status
Obsolete
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25°C
8A
Rds On (Max) @ Id, Vgs
25 mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
415pF @ 13V
Power - Max
2.8W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO

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