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IPN80R1K4P7ATMA1

IPN80R1K4P7ATMA1 Image is for reference, Plz contact us to get the real picture
Part Number
IPN80R1K4P7ATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CHANNEL 800V 4A SOT223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPN80R1K4P7ATMA1.pdf
Total:$0.45343
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Infineon Technologies IPN80R1K4P7ATMA1 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 206252 pcs

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(In US Dollars)
1pcs
$0.45343

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Part Number
IPN80R1K4P7ATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CHANNEL 800V 4A SOT223
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4 Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs
10nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
250pF @ 500V
FET Feature
-
Power Dissipation (Max)
7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223
Package / Case
TO-261-3

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