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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single SI8481DB-T1-E1

SI8481DB-T1-E1

SI8481DB-T1-E1 Image is for reference, Plz contact us to get the real picture
Part Number
SI8481DB-T1-E1
Manufacturer
Vishay
Description
MOSFET P-CH 20V 9.7A 4-MICROFOOT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SI8481DB-T1-E1.pdf
Total:$0.16852
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Vishay SI8481DB-T1-E1 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 554957 pcs

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(In US Dollars)		 1pcs
$0.16852

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Part Number
SI8481DB-T1-E1
Manufacturer
Vishay
Description
MOSFET P-CH 20V 9.7A 4-MICROFOOT
Part Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
21 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
47nC @ 4.5V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
2500pF @ 10V
FET Feature
-
Power Dissipation (Max)
2.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-MICRO FOOT® (1.6x1.6)
Package / Case
4-UFBGA

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