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SI4666DY-T1-GE3

SI4666DY-T1-GE3 Image is for reference, Plz contact us to get the real picture
Part Number
SI4666DY-T1-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 25V 16.5A 8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SI4666DY-T1-GE3.pdf
Total:$0.00000
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Vishay SI4666DY-T1-GE3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 7310 pcs

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Part Number
SI4666DY-T1-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 25V 16.5A 8-SOIC
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25°C
16.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
10 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
34nC @ 10V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
1145pF @ 10V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)

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