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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single IPB60R160C6ATMA1

IPB60R160C6ATMA1

IPB60R160C6ATMA1 Image is for reference, Plz contact us to get the real picture
Part Number
IPB60R160C6ATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 600V 23.8A TO263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPB60R160C6ATMA1.pdf
Total:$1.95334
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Infineon Technologies IPB60R160C6ATMA1 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 47876 pcs

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(In US Dollars)		 1pcs
$1.95334

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Part Number
IPB60R160C6ATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 600V 23.8A TO263
Part Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
23.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
160 mOhm @ 11.3A, 10V
Vgs(th) (Max) @ Id
3.5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs
75nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1660pF @ 100V
FET Feature
-
Power Dissipation (Max)
176W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D²PAK (TO-263AB)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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