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SI5509DC-T1-GE3

SI5509DC-T1-GE3 Image is for reference, Plz contact us to get the real picture
Part Number
SI5509DC-T1-GE3
Manufacturer
Vishay
Description
MOSFET N/P-CH 20V 6.1A 1206-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SI5509DC-T1-GE3.pdf
Total:$0.00000
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Vishay SI5509DC-T1-GE3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 13421 pcs

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Part Number
SI5509DC-T1-GE3
Manufacturer
Vishay
Description
MOSFET N/P-CH 20V 6.1A 1206-8
Part Status
Obsolete
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
6.1A, 4.8A
Rds On (Max) @ Id, Vgs
52 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
455pF @ 10V
Power - Max
4.5W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Supplier Device Package
1206-8 ChipFET™

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