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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single SI4459BDY-T1-GE3

SI4459BDY-T1-GE3

SI4459BDY-T1-GE3 Image is for reference, Plz contact us to get the real picture
Part Number
SI4459BDY-T1-GE3
Manufacturer
Vishay
Description
MOSFET P-CHAN 30V SO-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SI4459BDY-T1-GE3.pdf
Total:$0.55760
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Vishay SI4459BDY-T1-GE3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 167720 pcs

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(In US Dollars)		 1pcs
$0.55760

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Part Number
SI4459BDY-T1-GE3
Manufacturer
Vishay
Description
MOSFET P-CHAN 30V SO-8
Part Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
20.5A (Ta), 27.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.9 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
84nC @ 10V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
3490pF @ 15V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 5.6W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)

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