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SIHD2N80E-GE3

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Part Number
SIHD2N80E-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 800V 2.8A DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SIHD2N80E-GE3.pdf
Total:$0.67240
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Vishay SIHD2N80E-GE3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 139084 pcs

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Part Number
SIHD2N80E-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 800V 2.8A DPAK
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800V
Current - Continuous Drain (Id) @ 25°C
2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.75 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19.6nC @ 10V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
315pF @ 100V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D-PAK (TO-252AA)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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